4
RF Device Data
Freescale Semiconductor
MRF7S19210HR3 MRF7S19210HSR3
Figure 1. MRF7S19210HR3(HSR3) Test Circuit Schematic
Z13 0.078″
x 0.102″
Microstrip
Z14 0.319″
x 0.102″
Microstrip
Z15 0.709″
x 0.220″
Microstrip
Z16 0.709″
x 0.220″
Microstrip
Z17 0.747″
x 0.066″
Microstrip
Z18 0.227″
x 0.066″
Microstrip
Z19 0.145″
x 0.090″
Microstrip
Z20 0.548″
x 0.090″
Microstrip
Z21 0.734″
x 0.090″
Microstrip
Z22, Z23 1.044″
x 0.100″
Microstrip
PCB Taconic RF35, 0.030″,
εr
=3.5
Z1 0.126″
x 0.066″
Microstrip
Z2 0.584″
x 0.079″
Microstrip
Z3 0.110″
x 0.079″
Microstrip
Z4 0.133″
x 0.079″
Microstrip
Z5 0.059″
x0.118″
Microstrip
Z6 0.059″
x0.118″
Microstrip
Z7 0.197″
x 0.102″
Microstrip
Z8 0.860″
x 0.551″
Microstrip
Z9 0.114″
x 0.551″
Microstrip
Z10 0.129″
x 1.102″
Microstrip
Z11 0.304″
x 1.102″
Microstrip
Z12 0.295″
x 0.276″
Microstrip
VBIAS
VSUPPLY
RF
Z18
OUTPUT
RF
INPUT
Z1
DUT
C1
C2
R1
Z2
Z3
Z4
C6
Z5
Z20
R3
Z9
Z11
Z12
Z13
Z14
Z15
C5
Z6
C15
C14
C13
Z10
Z22
C10
C12
C21
Z23
+
R2
C3
Z19
C4
Z7
Z8
Z21
C9
C8
C11
C17
Z16
Z17
C16
C18
C20
C22
+
C19
C7
Table 5. MRF7S19210HR3(HSR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C9, C11, C12, C19, C20
10
μF, 50 V Chip Capacitors
C5750X5R1H106M
TDK
C2, C8
100 nF Chip Capacitors
12065C104KAT2A
AVX
C3, C6, C7, C10, C14, C15,
C18
8.2 pF Chip Capacitors
ATC100B8R2BT500XT
ATC
C4
0.2 pF Chip Capacitor
ATC100B0R2BT500XT
ATC
C5
1.8 pF Chip Capacitor
ATC100B1R8BT500XT
ATC
C13
0.4 pF Chip Capacitor
ATC100B0R4BT500XT
ATC
C16, C17
0.5 pF Chip Capacitors
ATC100B0R5BT500XT
ATC
C21, C22
470
μF Electrolytic Capacitors
222212018471
Vishay BC Components
R1, R2
10 k?, 1/4 W Chip Resistors
WCR120610KFI
Welwyn
R3
10
?, 1/4 W Chip Resistor
WCR120610RFI
Welwyn
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相关代理商/技术参数
MRF7S21080HR3 功能描述:射频MOSFET电源晶体管 HV7 2.1GHZ 22W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF7S21080HR5 功能描述:射频MOSFET电源晶体管 HV7 2.1GHZ 22W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF7S21080HSR3 功能描述:射频MOSFET电源晶体管 HV7 2.1GHZ 22W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF7S21080HSR5 功能描述:射频MOSFET电源晶体管 HV7 2.1GHZ 22W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF7S21110HR3 功能描述:射频MOSFET电源晶体管 HV7 33W WCDMA NH780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF7S21110HR5 功能描述:射频MOSFET电源晶体管 HV7 33W WCDMA NH780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF7S21110HS 制造商:Freescale Semiconductor 功能描述:
MRF7S21110HSR3 功能描述:射频MOSFET电源晶体管 HV7 33W WCDMA NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray